Simulation of current-voltage characteristics of graphene field effect transistor (GFET) | Zendy

Hien Sy Dinh | Zendy

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Simulation of current-voltage characteristics of graphene field effect transistor (GFET)

Author(s) -

Hien Sy Dinh

Publication year - 2013

Publication title -

science and technology development journal

Language(s) - English

Resource type - Journals

ISSN - 1859-0128

DOI - 10.32508/stdj.v16i3.1633

Subject(s) - graphene , materials science , matlab , transistor , field effect transistor , voltage , simple (philosophy) , nanotechnology , spice , current (fluid) , optoelectronics , electronic engineering , computer science , electrical engineering , engineering , philosophy , epistemology , operating system

Graphene has been one of the most vigorously studied research materials. We have developed a program for simulation of graphene field effect transistor (GFET). In this work, we use the simulation program to explore the performance of graphene FET. The simple model of the graphene FET is based on non-equilibrium Green’s function method and first is implemented by using graphic user interface of Matlab. The current-voltage characteristics of the GFET and affects of channel materials, gate materials, size of graphene FET, temperature on the characteristics are explored.

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