Open AccessHefner model parameters for power IGBTS under pulsed power conditions
Author(s) -
James A. VanGordon
Publication year - 2010
Language(s) - Uncategorized
Resource type - Dissertations/theses
DOI - 10.32469/10355/10539
Subject(s) - insulated gate bipolar transistor , power (physics) , bipolar junction transistor , power semiconductor device , pulsed power , current injection technique , electrical engineering , electronic engineering , engineering , transistor , computer science , voltage , physics , quantum mechanics
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