THE COMPARISON OF OPAQUE TiO2 AND TRANSPARENT TiO2 ON THE PERFORMANCE OF AgSbS2–SENSITIZED SOLAR CELL PREPARED BY SOLUTION PROCESSING

This study reported the investigation of the use of opaque and transparent TiO2 paste as metal oxide on AgSbS2 quantum dots (QDs)-sensitized solar cell. Doctor blade method was employed to coat TiO2 paste onto FTO glass, whereas successive ionic layer adsorption and reaction (SILAR) was applied to grow AgSbS2 into the TiO2 layer. The SILAR process consisted of 3 cycles for depositing Ag-S and 6 cycles for obtaining Sb-S. AgSbS2 was yielded after annealing process at 3500C for 10 minutes under nitrogen condition. The best photovoltaic performance was achieved from transparent TiO2 paste, which gave the efficiency of 0.317 % with Voc of 0.24 V, Jsc of 3.51 mA/cm2, and FF of 37.62%. Opaque TiO2 paste showed lower photovoltaic performance, which gave an efficiency of 0.110% due to the difficulty of electrolyte to penetrate the matrix of the TiO2 layer and the existence of the cracks at the TiO2 layer. These results showed that in the case of AgSbS2 semiconductor, the utilization of transparent TiO2 paste would give better photovoltaic performance than that of opaque TiO2 paste.