English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

A quantitative model capturing Deep Reactive Ion Etch (DRIE) pattern density effects is presented. Our previous work has explored the causes of wafer-level variation and demonstrated dielevel interactions resulting from pattern density and reactant species consumption [1]. Several reports have focused on experimental evidence and modeling of feature-level (aspect ratio) dependencies [2]. In contrast, in this work we contribute a computationally efficient and effective modeling approach that focuses on layout pattern density-induced nonuniformity in DRIE. This is a key component in an integrated model combining wafer-, die-, and feature-level DRIE dependencies to predict etch depth for an input layout and a characterized etch tool and process. A microscale engine turbopump layout is used to demonstrate the model, which was calibrated to fit across-die variation within 1% and intra-die variation to within 0.1% (normalized RMS error).

PATTERN DENSITY BASED PREDICTION FOR DEEP REACTIVE ION ETCH (DRIE)