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Ultrafast dynamics of carriers and phonons of photoinjected double-plasma in aluminium nitride
Author(s) -
Clóves Gonçalves Rodrigues,
Roberto Luzzi
Publication year - 2021
Publication title -
revista mexicana de física
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.181
H-Index - 25
eISSN - 2683-2224
pISSN - 0035-001X
DOI - 10.31349/revmexfis.67.318
Subject(s) - phonon , ultrashort pulse , non equilibrium thermodynamics , plasma , condensed matter physics , materials science , charge carrier , nitride , electron , aluminium , physics , nanotechnology , optics , laser , quantum mechanics , metallurgy , layer (electronics)
Aluminum nitride is attracting great interest of the industry and scientific community due to its interesting properties. In this paper is performed a theoretical study on the ultrafast transient transport properties of photoinjected carriers in wurtzite AlN subjected to electric fields up to 80 kV/cm. For this, the Nonequilibrium Statistical Operator Method was used. The evolution towards the steady state of drift velocity of carriers (electrons and holes) and nonequilibrium temperature (carriers and phonons) subpicosecond scale were determined.

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