Estructura metal-semiconductor-metal en equilibrio | Zendy

F. Urbano Altamirano | Zendy; O. Yu. Titov | Zendy; Yu. G. Gurevich | Zendy

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Estructura metal-semiconductor-metal en equilibrio

Author(s) -

F. Urbano Altamirano,

O. Yu. Titov,

Yu. G. Gurevich

Publication year - 2020

Publication title -

revista mexicana de física

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.181

H-Index - 25

eISSN - 2683-2224

pISSN - 0035-001X

DOI - 10.31349/revmexfis.66.559

Subject(s) - semiconductor , electron , condensed matter physics , materials science , debye , radius , charge carrier , metal , intrinsic semiconductor , physics , quantum mechanics , optoelectronics , computer security , computer science , metallurgy

This article analyzes the behavior of electric charge carriers (electrons and holes) in a semiconductor material with metal contacts under thermodynamic equilibrium condition. Expressions were obtained for the concentrations of the electrons and holes, as well as for the Debye Radius () both in the general bipolar case, and in the particular cases of n, p and intrinsic type materials. Based on the previous expressions, the case is analyzed when the quasi-neutrality phenomenon appears in a semiconductor material.

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