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espanolEn este trabajo se reporta la fabricacion de un dispositivo laser de semiconductores III-V de confinamiento separado. La heteroestructura se crecio usando la tecnica de epitaxia por haces moleculares y se caracterizo optica, topografica y electricamente por medio de fotoluminiscencia, microscopia de tunelamiento, electroluminiscencia, relaciones de corriente-voltaje y corriente-potencia, respectivamente. El confinamiento electronico es llevado a cabo por un emparedamiento del area activa con pozos cuanticos de InGaAs con una composicion que permite un acople estructural entre el pozo cuantico y los puntos cuanticos autoensamblados de InAs disminuyendo las dislocaciones que darian lugar a una mala calidad del dispositivo. El objetivo es obtener una emision laser en las ventanas de menor absorcion de las fibras opticas situadas en el cercano infrarrojo en las que se basan los sistemas de telecomunicacion. EnglishIn this work the fabrication of III-V semiconductor laser device with separate confinement is reported. The heterostructure was grown by molecular beam epitaxy technique and it was characterized by optical, morphological and electrical techniques such as photoluminescence, scanning tunneling effect, electroluminescence, current-voltage and current-power relations, respectively. The electronic confinement was carried out by sandwiching the active area with InGaAs quantum well with an appropriated Indium composition that allows a structural coupling between quantum wells and self-assembled InAs quantum dots decreasing dislocations that could commit the device quality. Our aim is to obtain the laser emission in the lower absorption windows for optical fiber telecommunications systems located in the near-infrared.

Dispositivo láser semiconductor con puntos cuánticos para emisión en el cercano infrarrojo