Physical properties of reactive RF sputtered a-IZON thin films. | Zendy

J.J. Ortega | Zendy; C. R. Escobedo-Galván | Zendy; F. Avelar-Muñoz | Zendy; Arturo Agustín Ortiz-Hernández | Zendy; H. Tototzintle-Huitle | Zendy; C. Falcony | Zendy; José de Jesús Araiza Ibarra | Zendy

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Physical properties of reactive RF sputtered a-IZON thin films.

Author(s) -

J.J. Ortega,

C. R. Escobedo-Galván,

F. Avelar-Muñoz,

Arturo Agustín Ortiz-Hernández,

H. Tototzintle-Huitle,

C. Falcony,

José de Jesús Araiza Ibarra

Publication year - 2019

Publication title -

revista mexicana de física

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.181

H-Index - 25

eISSN - 2683-2224

pISSN - 0035-001X

DOI - 10.31349/revmexfis.65.133

Subject(s) - materials science , amorphous solid , thin film , crystallization , optoelectronics , sputtering , indium , sputter deposition , electrical resistivity and conductivity , cavity magnetron , composite material , chemical engineering , nanotechnology , crystallography , chemistry , electrical engineering , engineering

The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10 -3 Ω∙cm to 10 -4 Ω∙cm, while the carrier concentration showed values over 10 20 cm -3 with mobility between 10 and 21 cm 2 ⸱V -1 ⸱s -1 . The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices.

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