Characterization of high mobility inverted coplanar Zinc Nitride Thin-film Transistors | Zendy

Miguel A. Domínguez | Zendy; J. L. Pau | Zendy; Ovier Obregon | Zendy; Anayantzi Luna | Zendy; A. RedondoCubero | Zendy

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Characterization of high mobility inverted coplanar Zinc Nitride Thin-film Transistors

Author(s) -

Miguel A. Domínguez,

J. L. Pau,

Ovier Obregon,

Anayantzi Luna,

A. RedondoCubero

Publication year - 2018

Publication title -

revista mexicana de física

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.181

H-Index - 25

eISSN - 2683-2224

pISSN - 0035-001X

DOI - 10.31349/revmexfis.65.10

Subject(s) - materials science , thin film transistor , optoelectronics , capacitance , capacitor , dielectric , subthreshold slope , nitride , transistor , gate dielectric , threshold voltage , voltage , electrical engineering , electrode , nanotechnology , layer (electronics) , chemistry , engineering

In this work, high mobility TFTs based on zinc nitride (Zn 3 N 2 ) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn 3 N 2 TFTs . The devices exhibit an on/off-current ratio of 10 6 and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm 2 /Vs which is among the highest reported for Zn 3 N 2 TFTs. In addition, n-type MOS capacitors were fabricated and characterized by capacitance – voltage and capacitance – frequency measurements to evaluate the dielectric characteristics of the SOG film.

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