Open AccessDetermination of the barrier height of Pt-Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy
Author(s) -
Jesús Eduardo Rivera López,
Narcizo Muñoz A.,
G. Gutiérrez,
Pedro Alejandro Tamayo-Meza,
Alejandro Álvarez Zapata,
L. Martínez-Pérez
Publication year - 2018
Publication title -
revista mexicana de física
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.181
H-Index - 25
eISSN - 2683-2224
pISSN - 0035-001X
DOI - 10.31349/revmexfis.64.655
Subject(s) - schottky barrier , materials science , conductive atomic force microscopy , schottky diode , doping , electrical conductor , atomic force microscopy , metal–semiconductor junction , thin film , kelvin probe force microscope , optoelectronics , nanotechnology , nano , atmospheric temperature range , analytical chemistry (journal) , composite material , chemistry , physics , diode , chromatography , meteorology
By means of the I-V characteristics measured at room temperature, the height of the Schottky barrier established by the conductive Pt-Ir tip of an Atomic Force Microscope on the aluminum doped ZnO thin films were estimated in the range of 0 . 58-0 . 64 eV. The ideality factors were in the range of 2 . 11-1 . 39, respectively. These values are in accordance with those reported by other authors that measured the height of the Pt Schottky barrier on ZnO by means of several methods. The procedure detailed in this work suggests that the scanning time for obtaining I-V Schottky characteristics is of the order of 2 ms.
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