Open AccessInvestigation of Porous Silicon Photoconductive Structures
Author(s) -
Petro P. Parandiy,
Liubomyr S. Monastyrskii
Publication year - 2018
Language(s) - English
DOI - 10.30970/elit2018.b12
Subject(s) - photoconductivity , porous silicon , materials science , silicon , optoelectronics , porosity , composite material
Porous silicon layers photoconductive and electrical properties obtained by electrochemical etching of silicon have been investigated. Photoconductive and currentvoltage properties depend on structure morphology are determined by not only properties of modified layer, but presence of charge carriers’ traps. The photosensitivity of structures with PS layers is determined by thickness of porous layer.
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