The Conductivity and Photoelectric Properties of β-Ga2O3 Thin Films | Zendy

О. М. Бордун | Zendy; Б. О. Бордун | Zendy; I. Yo. Kukharskyy | Zendy; І Medvid | Zendy

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The Conductivity and Photoelectric Properties of β-Ga₂O₃ Thin Films

Author(s) -

О. М. Бордун,

Б. О. Бордун,

I. Yo. Kukharskyy,

І Medvid

Publication year - 2018

Language(s) - English

DOI - 10.30970/elit2018.b06

Subject(s) - photoelectric effect , conductivity , thin film , materials science , optoelectronics , analytical chemistry (journal) , chemistry , nanotechnology , chromatography

Conductivity, photoconductivity and luminescence properties of β-Ga2O3 thin films deposited by high-frequency ionplasma sputtering have been investigated depending on conditions and atmosphere of heat treatment. After annealing in a reducing atmosphere of hydrogen is a significant decrease in the resistivity of the films from the 10 Ohm×cm for freshly prepared films to 10 Ohm×cm it was found. The analysis of the results was investigated. Irrespective of the composition of the atmosphere in annealing β-Ga2O3 thin films photoconductivity observed effect it was shown. Compare photoconductivity spectra with the spectra excitations of luminescence indicated that the photoconductivity of β-Ga2O3 thin films associated with bandband transitions with the creation of free charge carriers in the

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