Hf3Ga1.97(2)Sn1.03(2), a ternary derivative of the ThIn type
Author(s) -
Iryna VOZNYAK,
Yaroslav TOKAYCHUK,
Viktor Hlukhyy,
Thomas F. Fässler,
R. Gladyshevskii
Publication year - 2011
Publication title -
chemistry of metals and alloys
Language(s) - English
Resource type - Journals
eISSN - 1998-8087
pISSN - 1998-8079
DOI - 10.30970/cma4.0191
Subject(s) - crystal structure , crystallography , solid solution , ternary operation , gallium , group (periodic table) , diffraction , tin , x ray crystallography , type (biology) , space group , powder diffraction , materials science , chemistry , physics , metallurgy , geology , paleontology , computer science , programming language , organic chemistry , optics
The crystal structure of the substitutional solid solution HfGa1-xSnx (x = 0-0.34(1)) was refined from X-ray single-crystal and powder diffraction data (space g roup Pbcm, Pearson symbol oP24, a = 9.3370(19), b = 8.6920(17), c = 5.6650(11) Å for Hf 3Ga1.97(2)Sn1.03(2)). The structure of the ideal limiting formula Hf3Ga2Sn, ignoring partial Ga/Sn disorder, represents the first ternary ordering derivative of the structure type ThIn. The structure of Hf3Ga2Sn is closely related to that of Hf 5GaSn3 (limiting composition of the interstitial solid solution Hf5GaxSn3 (x = 0-1), structure type Hf5CuSn3, space group P63/mcm) and can be derived from it applying group-subgroup relations between the space groups.
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