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Based on a crystal chemical model for defect subsys tems, the equilibrium concentrations of point defec ts and free charge carriers and the degree of off-stoichio metry of CdTe have been calculated as a function of the annealing temperature (T) and vapor pressure of the additional component (c admium PCd or tellurium PТе). The requirements for double-temperature annealing l eading to the formation of materials with nor p-type conductivity have been determined.

Thermodynamics of intrinsic point defects in cadmium telluride at the boundary of the homogeneity region