Thermodynamics of intrinsic point defects in cadmium telluride at the boundary of the homogeneity region | Zendy

D. M. Freik | Zendy; Igor GORITCHOK | Zendy; V.V. Prokopiv | Zendy

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Thermodynamics of intrinsic point defects in cadmium telluride at the boundary of the homogeneity region

Author(s) -

D. M. Freik,

Igor GORITCHOK,

V.V. Prokopiv

Publication year - 2011

Publication title -

chemistry of metals and alloys

Language(s) - English

Resource type - Journals

eISSN - 1998-8087

pISSN - 1998-8079

DOI - 10.30970/cma4.0188

Subject(s) - cadmium telluride photovoltaics , annealing (glass) , cadmium , crystallographic defect , stoichiometry , tellurium , homogeneity (statistics) , thermodynamics , materials science , chemistry , crystallography , metallurgy , physics , nanotechnology , statistics , mathematics

Based on a crystal chemical model for defect subsys tems, the equilibrium concentrations of point defec ts and free charge carriers and the degree of off-stoichio metry of CdTe have been calculated as a function of the annealing temperature (T) and vapor pressure of the additional component (c admium PCd or tellurium PТе). The requirements for double-temperature annealing l eading to the formation of materials with nor p-type conductivity have been determined.

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