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Electronic transport properties of RxY1-xNi5Ge3 (R = Ce, Yb) with R elements in Kondo state
Author(s) -
G.M. Koterlyn,
B. S. Morokhivskii,
M. Koterlyn,
R. Gladyshevskii
Publication year - 2009
Publication title -
chemistry of metals and alloys
Language(s) - English
Resource type - Journals
eISSN - 1998-8087
pISSN - 1998-8079
DOI - 10.30970/cma2.0104
Subject(s) - state (computer science) , condensed matter physics , kondo effect , physics , materials science , computer science , quantum mechanics , electrical resistivity and conductivity , algorithm
1 Western Scientific Center of the National Academy o f Sciences and Ministry of Education and Science of Ukraine, Matejka St. 4, 79000 Lviv, Ukraine 2 Faculty of Electronics, Ivan Franko National Univer sity of Lviv, Dragomanova St. 50, 79005 Lviv, Ukrai ne 3 Department of Physics, Kazimierz Wielki University, Weyssenhoffa Sq. 11, 85-072 Bydgoszcz, Poland 4 Department of Inorganic Chemistry, Ivan Franko Nati onal University of Lviv, Kyryla i Mefodiya St. 6, 79005 Lviv, Ukraine * Corresponding author. E-mail: koterlyn@mail.lviv.u a

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