Dot Line Pattern Formation in Photoresist Films by Mask-Guided LIPSS Formation Due to Excimer Laser Irradiation
Author(s) -
Shengying Lai,
Pierre Lorenz,
Martin Ehrhardt,
Bing Han,
Jian Lü,
K. Zimmer,
T Lippert,
P Dyer,
S Jenkins,
J Sidhu,
M Bolle,
S Lazare,
P Dyer,
R Farley,
R Giedl,
M Csete,
Z Bor,
J Sipe,
J Young,
J Preston,
H Niino,
M Nakano,
S Nagano,
T Bahners,
E Schollmeyer,
N Bityurin,
E Arenholz,
N Arnold,
J Cong,
J Wang,
J Xie,
F Bauer,
U Decker,
K,
E Rebollar,
M Castillejo,
T Ezquerra,
K Zimmer,
R Bhme,
A Braun,
P Dyer,
R Farley,
R Giedl,
J Dunkel,
F Wippermann,
A Bruckner
Publication year - 2019
Publication title -
journal of laser micro/nanoengineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 26
ISSN - 1880-0688
DOI - 10.2961/jlmn.2019.02.0002
Subject(s) - photoresist , materials science , excimer laser , irradiation , excimer , line (geometry) , optoelectronics , laser , resist , optics , nanotechnology , layer (electronics) , mathematics , geometry , physics , nuclear physics
Micro-nano patterns are requested for various applications mimicking structures from nature. Here top-down patterning by phase mask irradiation was combined with bottom-up LIPSS (Laser Induced Periodic Surface Structures) formation processes to achieve hierarchically organized structures. Novolac films (200 to 700 nm film thickness) were irradiated by a high number of excimer laser pulses (N = 1500) at very low fluences (F = 12 ± 1 mJ/cm2) to achieve the LIPSS formation. The area, the organization and the appearance of the LIPSS are related to the confinement of the LIPSS formation area due to the incident laser energy density distribution at the sample. At particular conditions using phase mask irradiation single chain dot like pattern with a size of approximately 220 nm have been achieved. This particular result represents a unique feature of LIPSS formation by surface scattering due to the confinement of the laser-driven interaction processes.
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