Investigation on Laser-annealing and Subsequent Laser-nanotexturing of Amorphous Silicon (a-Si) Films for Photovoltaic Application
Author(s) -
I. A. Palani,
Nilesh J. Vasa,
M. Singaperumal,
T. Okada
Publication year - 2010
Publication title -
journal of laser micro/nanoengineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 26
ISSN - 1880-0688
DOI - 10.2961/jlmn.2010.02.0010
Subject(s) - materials science , amorphous silicon , annealing (glass) , amorphous solid , photovoltaic system , silicon , optoelectronics , laser , green laser , optics , composite material , crystalline silicon , crystallography , electrical engineering , chemistry , physics , engineering
3+ :YAG laser is reported. The technique involved is laser annealing and subsequent laser nano texturing by over lapping the laser spot by 50% and 90% of the diameter. Experimental investigations were per- formed using third (355 nm), second (532 nm) and fundamental harmonics (1064 nm) of the pulsed Nd 3+ :YAG laser. To investigate the texturization AFM measurement was performed. Absorbance and photoconductivity measurements were performed to analyze the photovoltaic properties of thin films. The process was theoretically analyzed using a 3-D heat transformation model in FEMLAB software. 355 nm laser assisted nano-texturing with 90% overlap showed an improvement in crys- talline property and improved textured surface with a higher absorbance as compared to that of 50% overlap.
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