Multibandgap Quantum Well Wafers by IR Laser Quantum Well Intermixing: Simulation of the Lateral Resolution of the Process | Zendy

Jan J. Dubowski | Zendy

Open Access

Multibandgap Quantum Well Wafers by IR Laser Quantum Well Intermixing: Simulation of the Lateral Resolution of the Process

Author(s) -

Jan J. Dubowski

Publication year - 2006

Publication title -

journal of laser micro/nanoengineering

Language(s) - English

Resource type - Journals

ISSN - 1880-0688

DOI - 10.2961/jlmn.2006.01.0010

Subject(s) - wafer , materials science , resolution (logic) , process (computing) , quantum , laser , optoelectronics , quantum well , optics , physics , quantum mechanics , computer science , artificial intelligence , operating system

Post-growth selective-area bandgap tuning of quantum well (QW) microstructures has been investigated using Finite Element Method computer simulations. Laser fast scanning is proposed as a way to overcome the problem of damaging the surface with a small spot needed to obtain better spatial resolution. Influence of laser parameters, background heating, beam scanning speed and properties of QW microstructures on the ability to achieve sharp bandgap profiles in the laserwritten intermixed material are investigated. Lateral resolution of 2 µm is expected to be achievable with a 12-µm beam laser rapid thermal annealing.

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