Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides | Zendy

А.С. Рысбаев | Zendy; S.U. Irgashev | Zendy; A.S. Kasimov | Zendy; D.Sh. Juraeva | Zendy; J. B. Khujaniyazov | Zendy; M.I. Khudoyberdieva | Zendy

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Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

Author(s) -

А.С. Рысбаев,

S.U. Irgashev,

A.S. Kasimov,

D.Sh. Juraeva,

J. B. Khujaniyazov,

M.I. Khudoyberdieva

Publication year - 2020

Publication title -

eurasian journal of physics and functional materials

Language(s) - English

Resource type - Journals

eISSN - 2616-8537

pISSN - 2522-9869

DOI - 10.29317/ejpfm.2020040106

Subject(s) - silicide , annealing (glass) , materials science , ion implantation , thin film , nanoscopic scale , ion , nanotechnology , silicon , optoelectronics , chemical engineering , metallurgy , chemistry , organic chemistry , engineering

The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.

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