Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing | Zendy

А.С. Рысбаев | Zendy; I. R. Bekpulatov | Zendy; Б.Д. Игамов | Zendy; Sh.X. Juraev | Zendy

Open Access

Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

Author(s) -

А.С. Рысбаев,

I. R. Bekpulatov,

Б.Д. Игамов,

Sh.X. Juraev

Publication year - 2019

Publication title -

eurasian journal of physics and functional materials

Language(s) - English

Resource type - Journals

eISSN - 2616-8537

pISSN - 2522-9869

DOI - 10.29317/ejpfm.2019030307

Subject(s) - annealing (glass) , materials science , ion implantation , semiconductor , ion , silicon , semiconductor materials , electronics , optoelectronics , engineering physics , nanotechnology , metallurgy , chemistry , engineering , organic chemistry

The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing pand n-structures and the possibilities of their application in electronics are discussed.

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