Plasma Etching of Polycrystalline Silicon using Thinning Technology for Application in CMOS and MEMS Technologies | Zendy

A. M. Nunes | Zendy; Stanislav A. Moshkalev | Zendy; Peter Jürgen Tatsch | Zendy; A. M. Daltrini | Zendy

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Plasma Etching of Polycrystalline Silicon using Thinning Technology for Application in CMOS and MEMS Technologies

Author(s) -

A. M. Nunes,

Stanislav A. Moshkalev,

Peter Jürgen Tatsch,

A. M. Daltrini

Publication year - 2020

Publication title -

journal of integrated circuits and systems

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.125

H-Index - 11

eISSN - 1872-0234

pISSN - 1807-1953

DOI - 10.29292/jics.v2i2.269

Subject(s) - fabrication , etching (microfabrication) , polycrystalline silicon , microelectromechanical systems , materials science , silicon , anisotropy , plasma etching , cmos , optoelectronics , isotropic etching , dry etching , thinning , nanotechnology , optics , layer (electronics) , thin film transistor , ecology , biology , medicine , alternative medicine , physics , pathology

This work presents results of the study of profile evolution for Si-poly structures during plasma etching using the thinning technology in SF6/CF4/CHF3 gas mixtures. Structures with an aspect ratio (height/width) up to 5, widths end in the range of 0.3 – 0.1 μm and 0.3μm thick, were produced. Sipoly structures with high anisotropy (anisotropy factor up to 0.92-0.98) after etching were demostrated. The method can be used for fabrication of sub-micron Si-poly gates in CMOS and in fabrication

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