Using the Hexagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments | Zendy

Vinicius Vono Peruzzi | Zendy; William Cruz | Zendy; Gabriel Augusto da Silva | Zendy; Eddy Simoen | Zendy; Cor Claeys | Zendy; Salvador Pinillos Gimenez | Zendy

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Using the Hexagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments

Author(s) -

Vinicius Vono Peruzzi,

William Cruz,

Gabriel Augusto da Silva,

Eddy Simoen,

Cor Claeys,

Salvador Pinillos Gimenez

Publication year - 2020

Publication title -

journal of integrated circuits and systems

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.125

H-Index - 11

eISSN - 1872-0234

pISSN - 1807-1953

DOI - 10.29292/jics.v15i2.185

Subject(s) - mosfet , materials science , optoelectronics , subthreshold conduction , diamond , cmos , threshold voltage , transistor , electronic engineering , electrical engineering , voltage , engineering , composite material

Digital Object Identifier 10.29292/jics.v15i2.185 Abstract— This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-channel Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), which were manufactured in an 130 nm Silicon-Germanium Bulk Complementary MOS (CMOS) technology and exposed to different X-rays Total Ionizing Doses (TIDs). The results indicate that the Diamond layout style with an alpha () angle equal to 90 ̊ for MOSFETs is capable of reducing the device mismatching by at least 17% regarding the electrical parameters studied as compared to the Conventional MOSFET (CnM) counterparts. Therefore, the Diamond layout style can be considered an alternative hardness-by-design (HBD) layout strategy to boost the electrical performance and TID tolerance of MOSFETs.

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