Open AccessZero Temperature Coefficient behavior for Ellipsoidal MOSFET
Author(s) -
Luciano Mendes Camillo,
Marcos Paulo Braga de Lima,
Marco Aurélio Pinhel Peixoto,
Marcello Marcelino Correa,
Salvador Pinillos Gimenez
Publication year - 2020
Publication title -
journal of integrated circuits and systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.125
H-Index - 11
eISSN - 1872-0234
pISSN - 1807-1953
DOI - 10.29292/jics.v15i2.166
Subject(s) - mosfet , threshold voltage , materials science , saturation (graph theory) , condensed matter physics , ellipsoid , work (physics) , saturation current , transistor , voltage , mechanics , computational physics , physics , thermodynamics , mathematics , quantum mechanics , combinatorics , astronomy
Digital Object Identifier 10.29292/jics.v15i2.166 Abstract—The zero temperature coefficient (ZTC) is investigated by three-dimensional numerical simulations in the MetalOxide-Semiconductor (MOS) Field Effect Transistor (MOSFET) with the ellipsoidal (EM) and conventional rectangular gate geometries (CM), considering the same channel widths (W), gate areas (AG) and bias condition (BC). In this work an improved simple model which predicts the ZTC point taking into account only the mobility degradation factor (c) and threshold voltage (Vth) parameters as function of temperature is proposed in the linear and saturation operation regions. The analysis takes into account the temperature variations of the threshold voltage and the mobility degradation factor. Although simple, the model predictions present a good agreement with the numerical simulations results
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