The Impact of Doping on the Anti-Resonance Effects of A11g Mode of InSe | Zendy

Mahmoud Zolfaghari | Zendy

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The Impact of Doping on the Anti-Resonance Effects of A11g Mode of InSe

Author(s) -

Mahmoud Zolfaghari

Publication year - 2019

Publication title -

international journal of optics and photonics

Language(s) - English

Resource type - Journals

eISSN - 2538-4007

pISSN - 1735-8590

DOI - 10.29252/ijop.13.2.171

Subject(s) - doping , mode (computer interface) , resonance (particle physics) , materials science , optoelectronics , physics , computer science , atomic physics , human–computer interaction

A comparative study of antiresonance effects in InSe and InSe doped with GaS, using the resonant Raman spectroscopy is presented. The nonpolar optical phonon of 1 1g A symmetry in InSe exhibits a pronounced decrease in the Raman cross-section at excitation energy 2.585 eV. In InSe doped with GaS samples, it is found that the anti-resonance behavior decreases as doping contents are increased. To account these observations, a model is applied to explain and interpret the Raman intensity evolution versus incident photon energy. The agreement between theory and experiment is good.

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