850/940-nm VCSEL for optical communication and 3D sensing
Author(s) -
ChihHsien Cheng,
Shen Chih-Chiang,
Kao Hsuan-Yun,
Hsieh Dan-Hua,
Wang Huai-Yung,
Yeh Yen-Wei,
Lu Yun-Ting,
Huang Chen Sung-Wen,
Tsai Cheng-Ting,
Chi Yu-Chieh,
Kao Tsung Sheng,
Wu Chao-Hsin,
Kuo Hao-Chung,
Lee Po-Tsung,
GongRu Lin
Publication year - 2018
Publication title -
opto-electronic advances
Language(s) - English
Resource type - Journals
ISSN - 2096-4579
DOI - 10.29026/oea.2018.180005
Subject(s) - vertical cavity surface emitting laser , optoelectronics , materials science , laser , optics , bandwidth (computing) , quantum well , computer science , physics , telecommunications
This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.
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