DESIGN OF L-BAND HIGH SPEED PULSED POWER AMPLIFIER USING LDMOS FET | Zendy

Yi Huimin | Zendy; SungYong Hong | Zendy

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DESIGN OF L-BAND HIGH SPEED PULSED POWER AMPLIFIER USING LDMOS FET

Author(s) -

Yi Huimin,

SungYong Hong

Publication year - 2008

Publication title -

progress in electromagnetics research m

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.216

H-Index - 31

ISSN - 1937-8726

DOI - 10.2528/pierm08032805

Subject(s) - ldmos , amplifier , fet amplifier , common source , optoelectronics , electrical engineering , power (physics) , materials science , computer science , rf power amplifier , physics , voltage , transistor , engineering , cmos , quantum mechanics

In this paper, we design and fabricate the L-band high speed pulsed HPA using LDMOS FET. And we propose the high voltage and high speed switching circuit for LDMOS FET. The pulsed HPA using LDMOS FET is simpler than using GaAs FET because it has a high gain, high output power and single voltage supply. LDMOS FET is suitable for pulsed HPA using switching method because it has 2 ∼ 3 times higher maximum drain-source voltage (65 V) than operating drain-source voltage (Vds = 26 ∼ 28 V). As results of test, the output peak power is 100 W at 1.2 GHz, the rise/fall time of output RF pulse are 28.1 ns/26.6 ns at 2 us pulse width with 40 kHz PRF, respectively.

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