Open AccessHIGH FREQUENCY ELECTRICAL CHARACTERIZATION OF 3D SIGNAL/GROUND THROUGH SILICON VIAS
Author(s) -
S. Adamshick,
Robert J. Carroll,
M.Umamaheswara Rao,
Douglas La Tuplie,
Seth Kruger,
John Burke,
M. Liehr
Publication year - 2014
Publication title -
progress in electromagnetics research letters
Language(s) - English
Resource type - Journals
ISSN - 1937-6480
DOI - 10.2528/pierl14052704
Subject(s) - characterization (materials science) , silicon , materials science , signal (programming language) , optoelectronics , electronic engineering , computer science , engineering , nanotechnology , programming language
D integration using through-silicon-vias (TSVs) is gaining considerable attention due to its superior packaging e-ciency resulting in higher functionality, improved performance and a reduction in power consumption. In order to implement 3D chip designs with TSV technology, robust TSV electrical models are required. Speciflcally, due to the increase of signal speeds into the gigahertz (GHz) spectrum, a high frequency electrical characterization best describes TSV behavior. In this letter, 5 £ 50"m TSVs are manufactured using a via-mid integration scheme and characterized using S-parameters up to 65GHz. At 50GHz, the measured attenuation constant is 0.35dB/via with a time delay of 0.7ps/via.
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