NEW STABILIZATION TECHNIQUE TO PREVENT PARAMETRIC OSCILLATIONS IN A 35 W C-BAND ALGAN/GAN MMIC HIGH POWER AMPLIFIER | Zendy

Mehrdad Gholami | Zendy; M.C.E. Yagoub | Zendy

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NEW STABILIZATION TECHNIQUE TO PREVENT PARAMETRIC OSCILLATIONS IN A 35 W C-BAND ALGAN/GAN MMIC HIGH POWER AMPLIFIER

Author(s) -

Mehrdad Gholami,

M.C.E. Yagoub

Publication year - 2018

Publication title -

progress in electromagnetics research c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.341

H-Index - 34

ISSN - 1937-8718

DOI - 10.2528/pierc18062601

Subject(s) - monolithic microwave integrated circuit , amplifier , power (physics) , parametric statistics , materials science , high electron mobility transistor , electrical engineering , optoelectronics , physics , transistor , engineering , mathematics , voltage , cmos , statistics , quantum mechanics

In this paper, a novel stabilization scheme to prevent parametric oscillations in power amplifiers is presented. Based on a new oscillation detection approach, the inductive degeneration technique was used, for the first time, to successfully stabilize a high-power amplifier and prevent parametric oscillations. A 0.15 μm AlGaN/GaN Microwave Monolithic Integrated Circuit high power amplifier operating at 5.8 GHz with 10% fractional bandwidth was designed and successfully stabilized using this approach. The proposed (4.7 × 3.7) mm2 three-stage amplifier achieves a saturated output power of 35 W with 29% power added efficiency and a large-signal gain of 26 dB.

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