HIGH PERFORMANCE V-BAND GAAS LOW NOISE AMPLIFIER WITH MODIFIED COPLANAR WAVEGUIDE EBG TRANSMISSION LINES TECHNOLOGY | Zendy

PoYuan Ke | Zendy; Fan-Hsiu Huang | Zendy; HsienChin Chiu | Zendy

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HIGH PERFORMANCE V-BAND GAAS LOW NOISE AMPLIFIER WITH MODIFIED COPLANAR WAVEGUIDE EBG TRANSMISSION LINES TECHNOLOGY

Author(s) -

PoYuan Ke,

Fan-Hsiu Huang,

HsienChin Chiu

Publication year - 2012

Publication title -

progress in electromagnetics research c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.341

H-Index - 34

ISSN - 1937-8718

DOI - 10.2528/pierc12042911

Subject(s) - coplanar waveguide , amplifier , optoelectronics , materials science , low noise amplifier , noise (video) , electric power transmission , electrical engineering , engineering , telecommunications , computer science , cmos , image (mathematics) , artificial intelligence , microwave

This paper presents an integrated millimeter-wave (mmW) low noise amplifler (LNA) which is implemented by using 0.15-"m baseline GaAs pHEMT technology. The design utilized mod- ifled co-planar waveguide (CPW) to perform a slow wave transmission line (TLine) with electromagnetic band gap (EBG) ground structures for the input/output matching networks. The low noise V-band LNA chip size was hence reduced by adopting the new EBG transmission lines. The developed amplifler exhibited a noise flgure of 6.21dB, and a peak gain of 17.3dB at 66GHz. Additionally, the amplifler has linear characteristics and its measured third-order intercept (IIP3) point is greater than i0:5dBm under a dc power consumption of 75mW.

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