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We present a pin-Traveling wave Photodetector (TWPD) on semi-insulating (SI) InP substrate at 1.55"m wavelength window with an electrical bandwidth of more than 120GHz, a line characteristic impedance of about 50›, and microwave index matched to the optical group index. The internal quantum e-ciency more than 99% for a 200"m long device is determined. The layer stack of the TWPD has previously utilized in a semiconductor optical amplifler (SOA). The TWPD can be monolithically integrated with passive and active components such as arrayed waveguide grating (AWG), Mach- Zehnder Interferometer (MZI), laser and modulator.

HIGH-SPEED PIN-TRAVELING WAVE PHOTODETECTOR BASED ON A SEMICONDUCTOR OPTICAL AMPLIFIER LAYER STACK ON SEMI-INSULATING INP SUBSTRATE