ANALYSIS OF ELECTRO STATIC DISCHARGE ON GAAS-BASED LOW NOISE AMPLIFIER | Zendy

ChulHee Kim | Zendy; SoonMi Hwang | Zendy; Jaehoon Choi | Zendy

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ANALYSIS OF ELECTRO STATIC DISCHARGE ON GAAS-BASED LOW NOISE AMPLIFIER

Author(s) -

ChulHee Kim,

SoonMi Hwang,

Jaehoon Choi

Publication year - 2011

Publication title -

progress in electromagnetics research c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.341

H-Index - 34

ISSN - 1937-8718

DOI - 10.2528/pierc11042701

Subject(s) - low noise amplifier , wafer , electronic engineering , static analysis , amplifier , noise (video) , electrical engineering , materials science , computer science , engineering , cmos , structural engineering , artificial intelligence , image (mathematics)

This paper studies static efiect of communication Low Noise Amplifler (LNA) that utilizes GaAs wafer. It analyzes the Electro-Static Discharge (ESD) efiect, which occurs within communication components, such as GaAs LNA, and describes testing standard and methods. In order to flnd out GaAs LNA's susceptibility to static, two well-recognized communication GaAs LNA IC models were selected to be tested. Commercial program allowed measuring of static energy inserted within LNA's internal circuit by running a simulation about static discharge of GaAs LNA. Then we analyzed malfunctions caused by static and discussed about architectural problem and improvement according to the test and simulation result, from the perspective of GaAs LNA's electro static discharge.

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