DEVELOPMENT OF A WIDEBAND HIGHLY EFFICIENT GAN VMCD VHF/UHF POWER AMPLIFIER | Zendy

Song Lin | Zendy; Aly E. Fathy | Zendy

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DEVELOPMENT OF A WIDEBAND HIGHLY EFFICIENT GAN VMCD VHF/UHF POWER AMPLIFIER

Author(s) -

Song Lin,

Aly E. Fathy

Publication year - 2011

Publication title -

progress in electromagnetics research c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.341

H-Index - 34

ISSN - 1937-8718

DOI - 10.2528/pierc10112306

Subject(s) - ultra high frequency , wideband , amplifier , power (physics) , electrical engineering , electronic engineering , materials science , telecommunications , computer science , physics , engineering , bandwidth (computing) , quantum mechanics

A 50 to 550MHz wideband gallium nitride (GaN) HEMT power amplifler with over 43dBm output power and 63% drain e-ciency has been successfully developed. The demonstrated wideband power amplifler utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifler's output power and e-ciency. To assure a wideband operation, a coaxial line impedance transformer has been used as part of the input matching network; meanwhile, a wideband a 1:1 ferrite loaded balun and low pass fllters are utilized on the amplifler's output side instead of the conventional serial harmonic termination.

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