English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A 50 to 550MHz wideband gallium nitride (GaN) HEMT power amplifler with over 43dBm output power and 63% drain e-ciency has been successfully developed. The demonstrated wideband power amplifler utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifler's output power and e-ciency. To assure a wideband operation, a coaxial line impedance transformer has been used as part of the input matching network; meanwhile, a wideband a 1:1 ferrite loaded balun and low pass fllters are utilized on the amplifler's output side instead of the conventional serial harmonic termination.

DEVELOPMENT OF A WIDEBAND HIGHLY EFFICIENT GAN VMCD VHF/UHF POWER AMPLIFIER