ELECTROMAGNETIC MODELING OF OUTCOUPLING EFFICIENCY AND LIGHT EMISSION IN NEAR-INFRARED QUANTUM DOT LIGHT EMITTING DEVICES | Zendy

Ahmed E. A. Farghal | Zendy; S. Wageh | Zendy; Atef Abou Elazm | Zendy

Open Access

ELECTROMAGNETIC MODELING OF OUTCOUPLING EFFICIENCY AND LIGHT EMISSION IN NEAR-INFRARED QUANTUM DOT LIGHT EMITTING DEVICES

Author(s) -

Ahmed E. A. Farghal,

S. Wageh,

Atef Abou Elazm

Publication year - 2010

Publication title -

progress in electromagnetics research b

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.208

H-Index - 47

ISSN - 1937-6472

DOI - 10.2528/pierb10070206

Subject(s) - optoelectronics , materials science , light emitting diode , indium tin oxide , infrared , radiation , substrate (aquarium) , optics , quantum dot , oled , light emission , plasmon , physics , nanotechnology , layer (electronics) , oceanography , geology

We report an analytical exciton emission model based on Green function for simulating the radiation characteristics of near- infrared Quantum Dot-light emitting devices (QD-LEDs). In this model the internally emitted light can be classifled into the following modes: Substrate, indium tin oxide (ITO)/organic waveguided, surface plasmonic modes, and external emitted mode. We investigate the in∞uence of the thickness of difierent layers and the distance between the emitting center and the cathode metal on the emitted power distribution among these modes. In addition, we study the angular radiation proflle for the externally emitted radiation and substrate waveguided mode in comparison with Lambertian radiation proflle. We show the change of the thickness of the difierent layers, and the positions of the emitting centers are critical to the optical performance of the device. The optimization of optical performance through device geometry increases the outcoupling e-ciency more than flve times.

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