COMPARATIVE MODELING OF SINGLE-ENDED THROUGH-SILICON VIAS IN GS AND GSG CONFIGURATIONS UP TO V-BAND FREQUENCIES

This work presents a novel comparative modeling scheme for single-ended (SE) through-silicon vias (TSVs) in GSG and GS conflgurations. Physical scalable models based on the equations developed herein indicate that the use of two symmetric ground TSVs in GSG conflguration relatively increases the parasitic capacitance and conductance in the silicon substrate. However, this increase in the parasitic capacitance requires that the parasitic inductance of SE TSV is reduced to maintain the same phase velocity in silicon. According to the modeling results, the GSG conflguration has a larger insertion loss than that of the GS conflguration because the former has a higher substrate conductance. Nevertheless, when measured using RF coaxial probes, the GSG conflguration exhibits a larger measurement bandwidth than the GS conflguration. Finally, with the assistance of a double-sided probing system, wideband S-parameter measurement can validate the established equivalent-circuit model of SE TSV in GSG conflguration up to V-band frequencies.