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DESIGN OF LOW-LOSS AND HIGHLY-SELECTIVE CMOS ACTIVE BANDPASS FILTER AT K-BAND
Author(s) -
Sen Wang,
BoZong Huang
Publication year - 2012
Publication title -
electromagnetic waves
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.437
H-Index - 89
eISSN - 1559-8985
pISSN - 1070-4698
DOI - 10.2528/pier12031301
Subject(s) - band pass filter , cmos , electronic filter topology , active filter , materials science , optoelectronics , electronic engineering , filter (signal processing) , high pass filter , electrical engineering , low pass filter , engineering , voltage
In this paper, a second-order Chebyshev active bandpass fllter (BPF) with three flnite transmission zeros is presented. The fllter utilizes a tapped-inductor feedback technique to compensate resistive losses of on-chip inductors, and a shunt-feedback inductor between input and output ports to achieve the transmission zeros. Moreover, one transmission zero is in the lower stopband, and two transmission zeros are in the upper stopband, thus improving the selectivity of the fllter signiflcantly. The fllter is designed and fabricated in a standard 0.18-"m CMOS technology with a chip area of 0:57mm £ 0:65mm including all testing pads. The circuit draws 6mA from a 0.7-V supply voltage. Additionally, the fllter achieves a 1.65-dB insertion loss and 13.2-dB return loss with a 17% 3-dB bandwidth at 23.5GHz. The measured NF and input P1dB is 6.7dB and i3:5dBm. The rejection levels at the transmission zeros are greater than 15.2dB. Finally, the large-signal characterizations are also investigated by the 1-dB compression point (P1dB) of the fllter.

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