ANALYSIS OF V TRANSMISSION LINES RESPONSE TO EXTERNAL ELECTROMAGNETIC FIELDS
Author(s) -
A. Cheldavi,
P. Nayeri
Publication year - 2007
Publication title -
electromagnetic waves
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.437
H-Index - 89
eISSN - 1559-8985
pISSN - 1070-4698
DOI - 10.2528/pier06093003
Subject(s) - electromagnetic field , electric power transmission , transmission (telecommunications) , physics , electrical engineering , telecommunications , computer science , engineering , quantum mechanics
In the present paper the response of V transmission line to electromagnetic illumination has been obtained. Also in order to determine the VTL frequency operation band for both TE and TM modes a Gaussian pulse source has been applied to the structure. The VTL structure has received considerable attention in high frequency and microwave IC packaging. The purpose of this study is to determine high frequency design considerations in order to reduce the effects of electromagnetic interference (EMI) on the VTL structure and maintain the desired performance. It was observed that the effect of incident EM waves on the V lines performance is considerably lower than conventional microstrips, however the V lines are more sensitive to sources at close proximity. In addition, although the V lines show lower dispersion at higher frequencies, their frequency operation band is limited by a resonance like behavior which is directly related to the V groove dimensions. The full wave analysis is carried out using the Yee-cell based 2 Dimensional Finite Difference Time Domain method (2D-FDTD), while enforcing a very stable and efficient mesh truncation technique.
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