A LOW VOLTAGE MEMS STRUCTURE FOR RF CAPACITIVE SWITCHES | Zendy

Saeid Afrang | Zendy; Ebrahim Abbaspour-Sani | Zendy

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A LOW VOLTAGE MEMS STRUCTURE FOR RF CAPACITIVE SWITCHES

Author(s) -

Saeid Afrang,

Ebrahim Abbaspour-Sani

Publication year - 2006

Publication title -

electromagnetic waves

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.437

H-Index - 89

eISSN - 1559-8985

pISSN - 1070-4698

DOI - 10.2528/pier06093001

Subject(s) - capacitive sensing , microelectromechanical systems , materials science , electrical engineering , voltage , optoelectronics , electronic engineering , engineering

—A novel structure for the capacitive micromachined switches with low actuation voltage is proposed. In this structure both contact plates of the switch are designed as displaceable membranes. Two structures with similar dimensions and conditions, differing on only the number,of the displaceable beams,are analytically investigated as well as simulated using ANSYS software. The obtained results indicate about 30% reduction in actuation voltage from the conventional single beam,to our proposed double beam,structure. The stress on the beam due to the actuation voltage is also reduced increasing the switching life time. The dynamic simulation results in switching time of 6.5 µsec compared to the 8.9 µsec of the analytical results. It can be implemented,by the well established surface micromachining for RF applications.

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