Effect of SiO2 ratio on electrical Properties of SiO2:ZnO Thin Films Prepared by pulsed laser depositions (PLD) technique

(5,10,15,20,25) % of silicon dioxide. The mixture was deposited on glass substrate by laser pulse deposition at room temperature to obtain (Zn2SiO4) thin films. The D.C conductivity showed a decrease in activation energy by increasing doping from (Ea1=0.096 eV) to (Ea1=0.075 eV) before annealing and after annealing from (Ea1=0.048 eV) to(Ea1=0.027 eV). Hall effect showed that the concentration of carriers increases from (2.79 ×10 18 cm -3 ) to (14.29× 10 18 cm -3 ) before annealing and from (0.30×10 16 cm -3 ) to (26.25×10 16 cm -3 ) after annealing. The mobility decreases from(2.3cm 2 /v. sec) to (0.99cm 2 /v. sec) before annealing and from (7cm 2 /v. sec) to (2.5cm 2 /v . sec).