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Bu calismada, ardisik iyonik tabaka adsorpsiyon ve reaksiyonu (SILAR) yontemi kullanilarak oda sicakliginda sentezlenen La (%1) -katkili ZnS kuantum noktalarinin (QDs) yapisal, morfolojik yuzeysel , optik ve fotovoltaik ozellikleri sirasiyla x- ray kirinimi (XRD), taramali elektron mikroskobu (SEM), opticabsorpsiyon optik absorpsiyon ve gelen fotonun elektrik akimina donusum verimi (IPCE) gibi olcumler yapilarak incelendi. La katki maddesinden dolayi La katkili ZnS QD’lara ait parcacik boyutu ve enerji band bant araliginin saf ZnS’ye kiyasla degistigi gozlemlendi.  Ayrica, ilk defa bu mecvcut mevcut calismada, IPCE olcumu yapilarak La katkili ZnS QD’lara ait fotovoltaik ozellikler incelendi. Boylece, La katkili ZnS QD’larin gunes pil uygulamalarinda umut verici hassaslastiricilar olarak kullanilabilecegi bu calismada onerilmektedir.

Synthesis of La doped ZnS quantum dots by SILAR method and investigation of their properties