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editor@tjprc.org A COMPARATIVE STUDY OF SUB-10NM SI, GE AND GAAS N-CHANNEL FINFET SHAFIQUL ISLAM , SHARIF UDDIN , HASAN ALI , JAVED HOSSAIN & ZAHID HASAN MAHMUD 5 1, 2, 3 Department of Electronics and Telecommunication En gineering, Begum Rokeya University, Rangpur, Bangla desh Department of Computer Science and Telecommunication Engineering, Noakhali Science and Technology University, Noakhali, Bangladesh Department of Electrical and Electronic Engineering , University of Dhaka, Dhaka, Bangladesh ABSTRACT

A Comparative Study of Sub-10nm Si, Ge and GaAs n-Channel FinFET