A Comparative Study of Sub-10nm Si, Ge and GaAs n-Channel FinFET | Zendy

Shafiqul Islam et al. Shafiqul Islam et al. | Zendy

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A Comparative Study of Sub-10nm Si, Ge and GaAs n-Channel FinFET

Author(s) -

Shafiqul Islam et al. Shafiqul Islam et al.

Publication year - 2017

Publication title -

international journal of semiconductor science and technology

Language(s) - English

Resource type - Journals

eISSN - 2278-9405

pISSN - 2250-1576

DOI - 10.24247/ijsstdec20171

Subject(s) - materials science , channel (broadcasting) , optoelectronics , engineering physics , electrical engineering , physics , engineering

editor@tjprc.org A COMPARATIVE STUDY OF SUB-10NM SI, GE AND GAAS N-CHANNEL FINFET SHAFIQUL ISLAM , SHARIF UDDIN , HASAN ALI , JAVED HOSSAIN & ZAHID HASAN MAHMUD 5 1, 2, 3 Department of Electronics and Telecommunication En gineering, Begum Rokeya University, Rangpur, Bangla desh Department of Computer Science and Telecommunication Engineering, Noakhali Science and Technology University, Noakhali, Bangladesh Department of Electrical and Electronic Engineering , University of Dhaka, Dhaka, Bangladesh ABSTRACT

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