Open AccessEffect of Temperature on Silicon Carriers Mobilities Using MATLAB
Author(s) -
Saad N. Ibrahim
Publication year - 2018
Publication title -
al-mustansiriyah journal of science
Language(s) - English
Resource type - Journals
eISSN - 2521-3520
pISSN - 1814-635X
DOI - 10.23851/mjs.v28i3.185
Subject(s) - silicon , electron mobility , mobilities , doping , materials science , electron , range (aeronautics) , optoelectronics , condensed matter physics , physics , composite material , social science , quantum mechanics , sociology
The effect of temperature on the electron and hole mobilities in silicon is studied using MATLAB. A theoretical study has been used for the electrons mobility and holes in silicon. The resulting data allows one to obtain the electron mobility and the hole mobility as a function of doping concentration and continuous temperature range between (200-550 Ko).
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