Layered Structure of Sputter Deposited Indium Zinc Oxide Films | Zendy

Jun-ichi Echigoya | Zendy; Akio Segawa | Zendy; Shiho Yamazaki | Zendy; Yuichiro Hayasaka | Zendy

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Layered Structure of Sputter Deposited Indium Zinc Oxide Films

Author(s) -

Jun-ichi Echigoya,

Akio Segawa,

Shiho Yamazaki,

Yuichiro Hayasaka

Publication year - 2014

Publication title -

journal of the japan institute of metals and materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.204

H-Index - 29

eISSN - 1880-6880

pISSN - 0021-4876

DOI - 10.2320/jinstmet.j2013051

Subject(s) - materials science , sapphire , sputtering , indium , zinc , crystal structure , epitaxy , substrate (aquarium) , thin film , sputter deposition , oxide , crystallography , optoelectronics , analytical chemistry (journal) , nanotechnology , metallurgy , optics , chemistry , layer (electronics) , laser , physics , oceanography , chromatography , geology

Layered structure of indium zinc oxide (IZO) films sputter deposited on a (001) sapphire substrate at temperatures of 673 and 873 K was investigated by electron microscopy. IZO films were grown epitaxially in [001] direction on a sapphire substrate. Lattice distances of a deposited IZO film were close to those of an In2ZnkOk+3 compound estimated from InZn ratio of the film. Periodical layered structure was observed in the films of k=1, 2, and 3, when the substrate temperature was 873 K. Crystal structure and lattice parameters of the compound of k=1, In2ZnO4 was determined as a=0.3392 nm, c=2.627 nm with the rhombohedral structure. [doi:10.2320/jinstmet.J2013051]

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