Optical properties of CuSe thin films - band gap determination | Zendy

M. Petrović | Zendy; Martina Gilić | Zendy; Jovana Ćirković | Zendy; M. Romčević | Zendy; N. Romčević | Zendy; J. Trajić | Zendy; I.S. Yahia | Zendy

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Optical properties of CuSe thin films - band gap determination

Author(s) -

M. Petrović,

Martina Gilić,

Jovana Ćirković,

M. Romčević,

N. Romčević,

J. Trajić,

I.S. Yahia

Publication year - 2017

Publication title -

science of sintering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.309

H-Index - 25

eISSN - 1820-7413

pISSN - 0350-820X

DOI - 10.2298/sos1702167p

Subject(s) - photoluminescence , materials science , thin film , spectroscopy , zinc selenide , band gap , selenide , vacuum evaporation , copper , analytical chemistry (journal) , substrate (aquarium) , scanning electron microscope , evaporation , field electron emission , direct and indirect band gaps , optics , optoelectronics , electron , nanotechnology , chemistry , metallurgy , composite material , selenium , physics , oceanography , chromatography , quantum mechanics , geology , thermodynamics

Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III45003

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