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In this paper the results of modeling and simulation of NBTI effects in   p-channel power VDMOS transistor have been presented. Based on the   experimental results, the threshold voltage shifts and changes of   transconductance during the NBT stress have been modeled and implemented in   the PSPICE model of the IRF9520 transistor. By predefining the threshold   voltage value before the NBT stress, and by assigning the stress time,   transfer characteristics of the transistor are simulated. These   characteristics are within (1.33÷11.25)% limits in respect to the measured   ones, which represents a good agreement. [Projekat Ministarstva nauke   Republike Srbije, br. OI 171026 i br. TR 32026

Modeling and PSPICE simulation of NBTI effects in VDMOS transistors