Microstructural and dielectrical characterization of Ho doped BaTiO3 ceramics

The Ho doped BaTiO3 ceramics, with different Ho2O3 content, ranging from 0.01 to 1.0 wt % Ho, were investigated regarding their microstructural and dielectric characteristics. Doped BaTiO3 were prepared using conventional solid state reaction and sintered at 1380°C for four hours. SEM analysis of Ho/BaTiO3 doped ceramics showed that the low doped samples exhibit mainly fairly uniform and homogeneous microstructure with the grain size ranged from 20-40 μm. In the samples with the higher dopant concentration the abnormal grain growth is inhibited and the grain size ranged between 2-10 μm. Measurements of dielectric properties were carried out as a function of temperature up to 180 °C at different frequencies. The samples doped with 0.01wt % of Ho, exhibit the high value of dielectric permittivity (εr = 2160) at room temperature. A nearly flat permittivity-response was obtained in specimens with higher additive content. Using a Curie-Weiss law and modified Curie-Weiss law the Curie constant (C), Curie temperature (Tc) and a critical exponent of nonlinearity (g) were calculated. The Curie temperature of doped samples were ranged from 128 to 130°C. The Curie constant for all series of samples decrease with increase of dopant concentration and the lowest values were observed on samples doped with 0.01 wt % of holmium. [Projekat Ministarstva nauke Republike Srbije, br. OI 172057: Directed synthesis, structure and properties of multifunctional materials i br. TR 32026