Broadband dielectric response of AlN ceramic composites | Zendy

I. V. Brodnikovska | Zendy; Andriy I. Deriy | Zendy; Vitaly Petrovsky | Zendy

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Broadband dielectric response of AlN ceramic composites

Author(s) -

I. V. Brodnikovska,

Andriy I. Deriy,

Vitaly Petrovsky

Publication year - 2014

Publication title -

processing and application of ceramics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.326

H-Index - 15

eISSN - 2406-1034

pISSN - 1820-6131

DOI - 10.2298/pac1401047b

Subject(s) - materials science , composite material , ceramic , sintering , dielectric , dissipation factor , microstructure , porosity , aluminium , dielectric loss , optoelectronics

Aluminium nitride (AlN) is considered as a substrate material for microelectronic applications. AlN ceramic composites with dierent amount of TiO2 (up to 4 vol.%) were obtained using hot pressing at dierent sintering temperature from 1700 to 1900 °C. It was shown that milling of the raw AlN powder has strongly inuence on sintering and improves densication. Broadband dielectric spectroscopy was used as a nondestructive method for monitoring of the ceramic microstructures. TiO2 additive aects the key properties of AlN ceramics. Thus, porosity of 0.1 %, dielectric permeability of σ = 9.7 and dielectric loss tangent of tanδ = 1.3·10-3 can be achieved if up to 2 vol.% TiO2 is added

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