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Computational study of diffusivities in diamond Ge-Si alloys
Author(s) -
Senlin Cui,
L.J. Zhang,
W.B. Zhang,
Yong Du,
Honghui Xu
Publication year - 2012
Publication title -
journal of mining and metallurgy section b metallurgy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.42
H-Index - 20
eISSN - 2217-7175
pISSN - 1450-5339
DOI - 10.2298/jmmb111102021c
Subject(s) - diamond , diffusion , materials science , impurity , thermodynamics , germanium , diamond cubic , silicon , condensed matter physics , metallurgy , chemistry , physics , organic chemistry
A variety of diffusivities in Ge-Si alloys available in the literature were critically reviewed. On the basis of the critically reviewed literature data, the diffusion parameters for self diffusivities and impurity diffusivities in diamond Ge-Si alloys were determined by considering the diffusion mechanism. A phenomenological treatment of the diffusivities in Ge-Si alloys were conducted. The finally obtained atomic mobilities can reproduce most of the diffusivities in diamond Ge-Si alloys as well as the concentration profiles of Ge-Si binary diffusion couples. In addition, the Manning modification on Darken Equation in diamond structure was also tested by using the presently obtained atomic mobilities

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