A single power supply 0.1-3.5 GHz low noise amplifier design using a low cost 0.5 μm d-mode pHEMT process | Zendy

Denis I. Sotskov | Zendy; V. V. Elesin | Zendy; А. Г. Кузнецов | Zendy; Nikolay A. Usachev | Zendy; Nikita M. Zhidkov | Zendy; Alexander Y. Nikiforov | Zendy

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A single power supply 0.1-3.5 GHz low noise amplifier design using a low cost 0.5 μm d-mode pHEMT process

Author(s) -

Denis I. Sotskov,

V. V. Elesin,

А. Г. Кузнецов,

Nikolay A. Usachev,

Nikita M. Zhidkov,

Alexander Y. Nikiforov

Publication year - 2020

Publication title -

facta universitatis - series electronics and energetics

Language(s) - English

Resource type - Journals

eISSN - 2217-5997

pISSN - 0353-3670

DOI - 10.2298/fuee2002317s

Subject(s) - high electron mobility transistor , low noise amplifier , amplifier , noise figure , electrical engineering , linearity , cascode , noise (video) , power (physics) , materials science , physics , transistor , engineering , computer science , voltage , cmos , quantum mechanics , artificial intelligence , image (mathematics)

Design and testing results of a single power supply wide-band low noise amplifier (LNA) based on low cost 0.5 µm D-mode pHEMT process are presented. It is shown that the designed cascode LNA has operating frequency range up to 3.5 GHz, power gain above 15 dB, noise figure below 2.2 dB, output linearity above 17 dBm and power consumption less than 325 mW. Potential immunity of the LNA to total ionizing dose and destructive single event effects exceed 300 krad and 60 MeV·cm 2 /mg respectively.

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