Open AccessComparison of different device concepts to increase the operating voltage of a trench isolated SOI technology to above 900V
Author(s) -
Ralf Lerner,
Klaus Schottmann,
Siegfried Hering,
Andreas Käberlein,
Matthias Fritzsch,
Klaus Schneider,
Daniel Beyer,
Steffen Heinz
Publication year - 2015
Publication title -
facta universitatis - series electronics and energetics
Language(s) - English
Resource type - Journals
eISSN - 2217-5997
pISSN - 0353-3670
DOI - 10.2298/fuee1504645l
Subject(s) - trench , overdrive voltage , shallow trench isolation , silicon on insulator , voltage , diode , electrical engineering , materials science , transistor , stacking , optoelectronics , breakdown voltage , power semiconductor device , electronic engineering , engineering , threshold voltage , silicon , physics , nanotechnology , layer (electronics) , nuclear magnetic resonance
For gate driver ICs in three phase power applications level shifters with more than 900V operating voltage are required. The extension of the voltage rating of an existing trench isolated SOI process was done with different device concepts: Serial stacking of lower voltage devices was evaluated as an alternative approach to conventional quasi-vertical and charge compensated lateral devices which need layout and material modifications. Based on sufficient 900V trench isolation the different device concepts were tested with diodes and transistors. For the usage as level shifters the focus was to achieve the required breakdown voltages with minimum area.
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