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The effect of both the process-induced defects and the dopant on the  time-dependent-dielectric breakdown in Ta2O5 stacks is discussed. The  breakdown degradation is analyzed in terms of specific properties of high-k  stacks which make their dielectric breakdown mechanism completely different  from that of classical SiO2. The relative impact of a number of factors  constituting the reliability issues in Ta2O5-based capacitors (trapping in  pre-existing traps, stress-induced new traps generation, the presence of  interface layer at Si and the role of the dopant) is clarified.

Peculiarities of time-dependent-dielectric breakdown characteristics of pure and doped Ta2O5 stacks