Peculiarities of time-dependent-dielectric breakdown characteristics of pure and doped Ta2O5 stacks | Zendy

E. Atanassova | Zendy; A. Paskaleva | Zendy

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Peculiarities of time-dependent-dielectric breakdown characteristics of pure and doped Ta2O5 stacks

Author(s) -

E. Atanassova,

A. Paskaleva

Publication year - 2013

Publication title -

facta universitatis - series electronics and energetics

Language(s) - English

Resource type - Journals

eISSN - 2217-5997

pISSN - 0353-3670

DOI - 10.2298/fuee1303281a

Subject(s) - dopant , materials science , dielectric , capacitor , dielectric strength , doping , trapping , stress (linguistics) , reliability (semiconductor) , degradation (telecommunications) , optoelectronics , condensed matter physics , composite material , electronic engineering , electrical engineering , thermodynamics , voltage , physics , ecology , linguistics , philosophy , power (physics) , biology , engineering

The effect of both the process-induced defects and the dopant on the time-dependent-dielectric breakdown in Ta2O5 stacks is discussed. The breakdown degradation is analyzed in terms of specific properties of high-k stacks which make their dielectric breakdown mechanism completely different from that of classical SiO2. The relative impact of a number of factors constituting the reliability issues in Ta2O5-based capacitors (trapping in pre-existing traps, stress-induced new traps generation, the presence of interface layer at Si and the role of the dopant) is clarified.

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